This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (Si Ge HBTs). It offers you a complete, from-the-ground-up understanding of Si Ge HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a Si Ge HBT.
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لغة الإنجليزية ● شكل PDF ● صفحات 589 ● ISBN 9781580535991 ● الناشر Artech House ● نشرت 2002 ● للتحميل 3 مرات ● دقة EUR ● هوية شخصية 4412730 ● حماية النسخ Adobe DRM
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