Peter Friedrichs & Tsunenobu Kimoto 
Silicon Carbide [PDF ebook] 
Volume 1: Growth, Defects, and Novel Applications

1) Bulk growth of Si C – review on advances of Si C vapor growth for improved doping and systematic study on dislocation evolution
2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds
3) Formation of extended defects in 4H-Si C epitaxial growth and development of fast growth technique
4) Fabrication of High Performance 3C-Si C Vertical MOSFETs by Reducing Planar Defects
5) Identification of intrinsic defects in Si C: Towards an understanding of defect aggregates by combining theoretical and experimental approaches
6) EPR Identification of Intrinsic Defects in 4H-Si C
7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide
8) Optical properties of as-grown and process-induced stack-ing faults in 4H-Si C
9) Characterization of defects in silicon carbide by Raman spectroscopy
10) Lifetime-killing defects in 4H-Si C epilayers and lifetime control by low-energy electron irradiation
11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-Si C epitaxial layers
12) Optical Beam Induced Current Measurements: principles and applications to Si C device characterisation
13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-Si C and their Application to Device Simulation
14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-Si C MOS capacitors
15) Non-basal plane Si C surfaces: Anisotropic structures and low-dimensional electron systems
16) Comparative Columnar Porous Etching Studies on n-type 6H Si C Crystalline faces
17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS
18) Epitaxial Graphene: an new Material
19) Density Functional Study of Graphene Overlayers on Si C

Peter Friedrichs is Managing Director at Si CED, a joint venture between Siemens and Infineon located in Erlangen, Germany. Si CED develops technologies for Si C power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests.
Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of Si C devices. He has authored over 300 scientific publications.
Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) ‘Silicon carbide as semiconductor material: novel aspects of crystal growth and doping’. Alongside its experimental research on Si C, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications.
Gerhard Pensl works with his group on the growth of Si C single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nürnberg, Germany, and has authored over 300 scientific publications.