Autor: Feng Zhe Chuan Feng

Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th …

Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th …

Devices, nanoscale science and technologies based on Ga N and related materials, have achieved great developments in recent years. New Ga N-based devices such as UV detectors, fast p-HEMT and …

III-Nitride semiconductor materials – (Al, In, Ga)N – are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have …

Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various …