Sourabh Khandelwal 
Advanced SPICE Model for GaN HEMTs (ASM-HEMT) [PDF ebook] 
A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design

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This book discusses in detail the Advanced SPICE Model for Ga N HEMTs (ASM-HEMT), a new industry standard model for Ga N-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM Ga N model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools.




  • Describes in detail a new industry standard for Ga N-based power and RF circuit design;

  • Includes discussion of practical problems and theirsolutions in Ga N device modeling;

  • Covers both radio-frequency (RF) and power electronics application of Ga N technology;

  • Describes modeling of both Ga N RF and power devices.





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Inhaltsverzeichnis

Introduction.- Ga N Device Operation.- Introduction to device modeling.- Industry standard ASM-HEMT compact model – Introduction.- Core charge and current model in ASM-HEMT model.- Real device effects model in ASM-HEMT model.- Radio-frequency Ga N modeling with ASM-HEMT model.- Power Ga N device modeling with ASM-HEMT model.- Model quality testing.- Design-Technology Co-optimization with ASM-HEMT model.

Über den Autor

Sourabh Khandelwal is Senior Lecturer at the School of Engineering at Macquarie University Sydney. . He is the lead developer of ASM–HEMT compact model, which is a new industry standard compact model for Ga N RF and power devices. Earlier to this role,    Manager of Berkeley Device Modeling Center and Postdoctoral Researcher at the BSIM group at University of California Berkeley. Before that, he worked as Research Engineer at IBM Semiconductor Research. He has over 200 publications in top-tier conferences and journals in the area of semiconductor device modeling and circuit design..
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Sprache Englisch ● Format PDF ● Seiten 188 ● ISBN 9783030777302 ● Dateigröße 8.6 MB ● Verlag Springer International Publishing ● Ort Cham ● Land CH ● Erscheinungsjahr 2022 ● herunterladbar 24 Monate ● Währung EUR ● ID 8259899 ● Kopierschutz Soziales DRM

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