This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium n MOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of Ni Ge/Ge contact is modulated to 0.1e V, the thermal stability of Ni Ge is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge n MOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Inhaltsverzeichnis
Introduction.- Ge-based Schottky barrier height modulation technology.- Metal germanide technology.- Contact resistance of Ge-based devices.- Conclusions.
Über den Autor
Dr. Li received his Bachelor degree of Science from Sichuan University in 2009, and Ph.D from Peking University in 2014
Prizes and awards: 2009-2014, Peking University Leo Ko Guan Scholarship, Chenming Hu Scholarship, Merit Student, Creative Talent Award. 2005-2009, Sichuan University National Scholarship (twice), National Encouragement Scholarship, Xinyuan Scholarship (twice), Comprehensive First-class Scholarship, Excellent Student Leader.
Publications: 1. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, “Low Electron Schottky Barrier Height of Ni Ge/Ge Achieved by Ion-Implantation after Germanidation Technique, ” IEEE Electron Device Lett., vol. 33, no. 12, pp. 1687–1689, Dec. 2012. 2. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, “Morphology and Electrical Performance Improvement of Ni Ge/Ge Contact by P and Sb Co-implantation, ” IEEE Electron Device Lett., vol. 34, no. 5, pp. 596–598, May. 2013. 3. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Min Li, Ming Li, Xing Zhang, and Ru Huang, “Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n⁺/p Diode Achieved by Multiple Implantation and Multiple Annealing Technique, ” IEEE Electron Device Lett., vol. 34, no. 9, pp. 1097–1099, Sep. 2013. 4. Zhiqiang Li, Xia An, Quanxin Yun, Meng Lin, Xing Zhang and Ru Huang, “Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film, ” ECS Solid State Lett., Vol. 1, no. 4, pp. Q33-Q34, 2012. 5. Zhiqiang Li, Xia An, Min Li, Quanxin Yun, Meng Lin, Ming Li, Xing Zhang, and Ru Huang, “Study on Schottky Barrier Modulation of Ni Ge/Ge by Ion-implantation after Germanidation Technique, ” The 11th ICSICT, Xi’an, 2012.
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