This first systematic, authoritative and thorough treatment in one comprehensive volume presents the fundamentals and technologies of the topic, elucidating all aspects of Zn O materials and devices.
Following an introduction, the authors look at the general properties of Zn O, as well as its growth, optical processes, doping and Zn O-based dilute magnetic semiconductors. Concluding sections treat bandgap engineering, processing and Zn O nanostructures and nanodevices.
Of interest to device engineers, physicists, and semiconductor and solid state scientists in general.
Tabla de materias
Preface
1 General Properties of Zn O
1.1 Crystal Structure
1.2 Lattice Parameters
1.3 Electronic Band Structure
1.4 Mechanical Properties
1.5 Vibrational Properties
1.6 Thermal Properties
1.7 Electrical Properties of Undoped Zn O
2 Zn O Growth
2.1 Bulk Growth
2.2 Substrates
2.3 Epitaxial Growth Techniques
3 Optical Properties
3.1 Optical Processes in Semiconductors
3.2 Optical Transitions in Zn O
3.3 Defects in Zn O
3.4 Refractive Index of Zn O and Mg Zn O
3.5 Stimulated Emission in Zn O
3.6 Recombination Dynamics in Zn O
3.7 Nonlinear Optical Properties
4 Doping of Zn O
4.1 n-Type Doping
4.2 p-Type Doping
5 Zn O-Based Dilute Magnetic Semiconductors
5.1 Doping with Transition Metals
5.2 General Remarks about Dilute Magnetic Semiconductors
5.3 Classification of Magnetic Materials
5.4 A Brief Theory of Magnetization
5.5 Dilute Magnetic Semiconductor Theoretical Aspects
5.6 Measurements Techniques for Identification of Ferromagnetism
5.7 Magnetic Interactions in DMS
5.8 Theoretical Studies on Zn O-Based Magnetic Semiconductors
5.9 Experimental Results on Zn O-Based Dilute Magnetic Semiconductors
6 Bandgap Engineering
6.1 Mgx Zn1-x O Alloy
6.2 Bex Zn1-x O Alloy
6.3 Cdy Zn1-y O Alloy
7 Zn O Nanostructures
7.1 Synthesis of Zn O Nanostructures
7.2 Applications of Zn O Nanostructures
8 Processing, Devices, and Heterostructures
8.1 A Primer to Semiconductor-Metal Contacts
8.2 Ohmic Contacts to Zn O
8.3 Schottky Contacts to Zn O
8.4 Etching of Zn O
8.5 Heterostructure Devices
8.6 Piezoelectric Devices
8.7 Sensors and Solar Cells Based on Zn O Nanostructures
8.8 Concluding Remarks
Sobre el autor
Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in Ga N and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.
Ümit Özgür is a research scientist in the Electrical Engineering Department at Virginia
Commonwealth University. He has received BS degrees in EE and physics from Bogazici
University, Turkey, and, in 2003, his Ph.D. degree from Duke University, where he has made many contributions to the understanding of ultrafast carrier dynamics in nitride heterostructures. Dr. Özgür has authored over 50 scientific publications and several book chapters on growth, fabrication, and characterization of wide bandgap semiconductor materials and nanostructures based on group III-nitrides and Zn O. He is a member of the Institute of Electrical and Electronics Engineers and the American Physical Society.
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