Nanostructured silicon-germanium (Si Ge) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (Si Ge) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of Si Ge nanostructures, with a further chapter discussing electronic band structures of Si Ge alloys. Part two concentrates on the formation of Si Ge nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of Si Ge nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising Si Ge alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of Si Ge in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (Si Ge) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. – Reviews the materials science of nanostructures and their properties and applications in different electronic devices- Assesses the structural properties of Si Ge nanostructures, discussing electronic band structures of Si Ge alloys- Explores the formation of Si Ge nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
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