Due to the recent discovery of the room-temperature visible light emission from porous silicon (P-Si), a great interest in P-Si and related materials has arisen in the last decade of the 20th century. Crystalline (c-) Si, at the heart of integrated circuits, has an indirect band gap of 1.1 e V, which limits its application in optoelectronics. The visible light emitting P-Si may open a new field combining Si integrated technology and optoelectronics. This book is a comprehensive review of the recent research and development of porous silicon. Strong visible photoluminescence (PL) and electroluminescence (EL) from P-Si and other forms of silicon nanocrystallites (nc-Si) are reviewed. Several proposed mechanisms for the PL from porous silicon such as quantum confinement, amorphicity and molecular PL are studied. The following issues are covered: mechanisms for the visible light emission, physical structures, studies of the PL and EL, correlation of structure and optical studies, surface physics and chemistry, relationships among various forms (P-Si, a-Si, uc-Si), device applications, future developments.
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भाषा अंग्रेज़ी ● स्वरूप PDF ● पेज 488 ● ISBN 9789814502467 ● संपादक Tsu Raphael Tsu & Feng Zhe Chuan Feng ● प्रकाशक World Scientific Publishing Company ● प्रकाशित 1994 ● डाउनलोड करने योग्य 3 बार ● मुद्रा EUR ● आईडी 7969524 ● कॉपी सुरक्षा Adobe DRM
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