This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
€96.29
विषयसूची
Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.
लेखक के बारे में
Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.यह ईबुक खरीदें और 1 और मुफ़्त पाएं!
भाषा अंग्रेज़ी ● स्वरूप PDF ● पेज 199 ● ISBN 9783319011653 ● फाइल का आकार 5.1 MB ● प्रकाशक Springer International Publishing ● शहर Cham ● देश CH ● प्रकाशित 2013 ● डाउनलोड करने योग्य 24 महीने ● मुद्रा EUR ● आईडी 2831524 ● कॉपी सुरक्षा सामाजिक DRM
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