Since the 1997 publication of "Silicon Carbide – A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the Si C field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world’s leading Si C researchers and design engineers to write on the most recent developments in Si C. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier Si C books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.
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