What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor "black arts" associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and Si Ge strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. Si Ge and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-Si Ge strained-layer epitaxy for device applications.Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/Si Ge strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern Si Ge epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of Si Ge, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample Si Ge HBT compact model parameters.