VLSI Electronics Microstructure Science, Volume 11: Ga As Microelectronics presents the important aspects of Ga As (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of Ga As technology for high-speed and high-frequency applications. This chapter summarizes the important properties of Ga As that serve to make this material and its related compounds technologically important. Chapter 2 covers Ga As substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of Ga As ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for Ga As ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in Ga As ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
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