To surmount the continuous scaling challenges of MOSFET devices, Fin FETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of Fin FET devices and technology, an overview of Fin FET device architecture and manufacturing processes, and detailed formulation of Fin FET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to Fin FET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.