This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.
Inhoudsopgave
Chapter 1. Physics of III-nitride light-emitting diodes. Chapter 2. Epitaxial growth of III-nitride LEDs.-
Chapter 3. High-efficiency top-emitting III-nitride LEDs.- Chapter 4. Flip-chip III-nitride LEDs.- Chapter 5. High-voltage and vertical LEDs.- Chapter 6. Device reliability and measurements.- Chapter 7. Mini/micro-LED.
Over de auteur
Dr. Shengjun Zhou
Shengjun Zhou received his Ph.D. degree from Shanghai Jiao Tong University, China in 2011. He is currently full Professor at Wuhan University, China. He was Research Fellow at the University of Michigan, Ann Arbor during 2014 and 2015. His research focuses on the growth and device fabrication of Ga N-based blue/green/ultraviolet LEDs.
Sheng Liu received his Ph.D. degree from Stanford University, USA in 1992. He is currently full professor at Wuhan University. His current research interests focus on the areas of LEDs, MEMS, optoelectronics, sensor and electronics packaging.
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