The Al In Ga N and Zn O materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.
Inhoudsopgave
UV LEDs.- Non-Polar Ga N Growth.- High-Quality Al Ga N Alloys.- Bulk Al N for UV LEDs.- Enhancement of the Light-Extraction Efficiency of Ga N-Based Light Emitting Diodes.- Ga N-Based Sensors.- III-N Alloys for Solar Power Conversion.- Ga N HEMT Technology.- Ga N Power Devices.- Nitride Nanostructures.- Radiation-Induced Defects in Ga N.- Electron Injection Effects in Ga N.- Progress and Prospect of Rare-Earth Nitrides.- Advances in PLD of Zn O and Related Compounds.- Zn O Nanowires and p-Type Doping.- Multifunctional Zn O Structures.- Zn O/Mg Zn O Quantum Wells.- GZO TFTs.
Over de auteur
Steve Pearton is one of the leaders in the field of Ga N research and a co-author of another related successful Springer book.
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