This book demonstrates to readers why Gallium Nitride (Ga N) transistors have a superior performance as compared to the already mature Silicon technology. The new Ga N-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) Ga N substrates and device physics; ii) innovative Ga N -transistors structure (lateral and vertical); iii) reliability and robustness of Ga N-power transistors; iv) impact of parasitic on Ga N based power conversion, v) new power converter architectures and vi) Ga N in switched mode power conversion.
- Provides single-source reference to Gallium Nitride (Ga N)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
- Demonstrates how Ga N is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
- Enables design of smaller, cheaper and more efficient power supplies.
Spis treści
Chapter1: Taking the next step in Ga N: bulk Ga N substrates and Ga N-on-Si epitaxy for electronics.- Chapter2: Lateral Ga N HEMT structures.- Chapter3: Vertical Ga N Transistors for Power Electronics.- Chapter4: Reliability of Ga N-based Power devices.- Chapter5: Validating Ga N robustness.- Chapter6: Impact of Parasitics on Ga N Based Power Conversion.- Chapter7: Ga N in AC/DC Power Converters.- Chapter8: Ga N in Switched Mode Power Amplifiers.
O autorze
Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.
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