Hans J. Scheel & Peter Capper 
Crystal Growth Technology [PDF ebook] 
From Fundamentals and Simulation to Large-scale Production

GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY
Phase Diagrams for Crystal Growth
Fundamentals of Equilibrium Thermodynamics
Thermodynamics, Origin, and Control of Defects
Thermophysical Properties of Molten Silicon
SIMULATION OF INDUSTRIAL GROWTH PROCESSES
Yield Improvement and Defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal Modeling
Modelling of Czochralski Growth of Large Silicon Crystals
Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in Cz-Si Crystal Growth
Modeling of Semitransparent Bulk Crystal Growth
COMPOUND SEMICONDUCTORS
Recent Progress in Ga As Growth Technologies at FREIBERGER
Interface Stability and Its Impact on Control Dynamics
Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)
Crystal-Growth Technology for Ternary III-IV Semiconductor Production by Vertical Bridgman and Vertical Gradient Freezing Methods with Accelerated Crucible Rotation Technique
X-Ray Diffraction Imaging of Industrial Crystals
SCINTILLATOR CRYSTALS
Continuous Growth of Large Halide Scintillation Crystals
OXIDES
Phase Equilibria and Growth of Langasite-Type Crystals
Flame-Fusion (Verneuil) Growth of Oxides
CRYSTAL GROWTH FOR SUSTAINING ENERGY
Saving Energy and Renewable Energy Through Crystal Growth Technology
CRYSTAL MACHINING
Crystal Sawing Technology
Plasma Chemical Vaporization Machining and Elastic Emission Machining

Professor Hans J. Scheel started the Scheel Consulting company in 2001 after retiring from the Swiss Federal Institute of Technology. Starting out with a chemical background, he has more than 40 years of experience with crystal growth and epitaxy in university as well as industry. For his achievements in bulk crystal growth and epitaxy technologies, he received awards from IBM and from Swiss, British, Korean Crystal Growth Associations, was elected member of the Russian Academy of Engineering Sciences, and received his D.Sc. from Tohoku University, Japan. He is co-author and editor of 6 books, author of more than 100 publications and patents, has organized international workshops on crystal technology and has been visiting professor at Osaka and Tohoku Universities, Japan, as well as Shandong University, China.
Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.