Ga N is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, Ga N power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.
This book presents a comprehensive overview of Ga N power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on Ga N power devices.
Ga N wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial Ga N wafers. Chapters 3 and 7, on the Ga N transistor fabrication process and Ga N vertical power devices, are edited by Dr. Zhihong Liu, who has been working on Ga N devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of Al Ga N/Ga N heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
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