This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature.
Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities.
Further key features include:
* practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues;
* detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application;
* systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers;
* coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program.
Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.
Tabela de Conteúdo
Preface xix
About the author xxiii
PART 1 DIODE LASER ENGINEERING 1
Overview 1
1 Basic diode laser engineering principles 3
Introduction 4
1.1 Brief recapitulation 4
1.2 Optical output power – diverse aspects 31
1.3 Selected relevant basic diode laser characteristics 45
1.4 Laser fabrication technology 81
References 96
2 Design considerations for high-power single spatial mode operation 101
Introduction 102
2.1 Basic high-power design approaches 103
2.2 Single spatial mode and kink control 146
2.3 High-power, single spatial mode, narrow ridge waveguide lasers 162
2.4 Selected large-area laser concepts and techniques 176
References 201
PART 2 DIODE LASER RELIABILITY 211
Overview 211
3 Basic diode laser degradation modes 213
Introduction 213
3.1 Degradation and stability criteria of critical diode laser characteristics 214
3.2 Classification of degradation modes 222
3.3 Key laser robustness factors 234
References 241
4 Optical strength engineering 245
Introduction 245
4.1 Mirror facet properties – physical origins of failure 246
4.2 Mirror facet passivation and protection 249
4.3 Nonabsorbing mirror technologies 259
4.4 Further optical strength enhancement approaches 270
References 276
5 Basic reliability engineering concepts 281
Introduction 282
5.1 Descriptive reliability statistics 283
5.2 Failure distribution functions – statistical models for nonrepairable populations 288
JWST233-fm JWST233-Epperlein Printer: Yet to Come December 12, 2012 15:10 Trim: 229mm × 152mm
5.3 Reliability data plotting 298
5.4 Further reliability concepts 306
5.5 Accelerated reliability testing – physics-statistics models 310
5.6 System reliability calculations 320
References 323
6 Diode laser reliability engineering program 325
Introduction 325
6.1 Reliability test plan 326
6.2 Reliability growth program 349
6.3 Reliability benefits and costs 350
References 353
PART 3 DIODE LASER DIAGNOSTICS 355
Overview 355
7 Novel diagnostic laser data for active layer material integrity; impurity trapping effects; and mirror temperatures 361
Introduction 362
7.1 Optical integrity of laser wafer substrates 362
7.2 Integrity of laser active layers 366
7.3 Deep-level defects at interfaces of active regions 376
7.4 Micro-Raman spectroscopy for diode laser diagnostics 386
References 406
8 Novel diagnostic laser data for mirror facet disorder effects; mechanical stress effects; and facet coating instability 409
Introduction 410
8.1 Diode laser mirror facet studies by Raman 410
8.2 Local mechanical stress in ridge waveguide diode lasers 416
8.3 Diode laser mirror facet coating structural instability 424
References 430
9 Novel diagnostic data for diverse laser temperature effects; dynamic laser degradation effects; and mirror temperature maps 433
Introduction 434
9.1 Thermoreflectance microscopy for diode laser diagnostics 435
9.2 Thermoreflectance versus optical spectroscopies 442
9.3 Lowest detectable temperature rise 444
9.4 Diode laser mirror temperatures by micro-thermoreflectance 445
9.5 Diode laser mirror studies by micro-thermoreflectance 451
9.6 Diode laser cavity temperatures by micro-electroluminescence 456
9.7 Diode laser facet temperature – two-dimensional mapping 460
References 466
Index 469
Sobre o autor
Dr. Peter W. Epperlein is Technology Consultant with his own semiconductor technology consulting business Pwe-Photonics Electronics-Issue Resolution in the UK. He looks back at a thirty years career in cutting edge photonics and electronics industries with focus on emerging technologies, both in global and start-up companies, including IBM, Hewlett-Packard, Agilent Technologies, Philips/NXP, Essient Photonics and IBM/JDSU Laser Enterprise. He holds Pre-Dipl. (B.Sc.), Dipl. Phys. (M.Sc.) and Dr. rer. nat. (Ph.D.) degrees in physics, magna cum laude, from the University of Stuttgart, Germany.
Dr. Epperlein is an internationally recognized expert in compound semiconductor and diode laser technologies. He has accomplished R&D in many device areas such as semiconductor lasers, LEDs, optical modulators, quantum well devices, resonant tunneling devices, FETs, and superconducting tunnel junctions and integrated circuits. His pioneering work on sophisticated diagnostic research has led to many world’s first reports and has been adopted by other researchers in academia and industry. He authored more than seventy peer-reviewed journal papers, published more than ten invention disclosures in the IBM Technical Disclosure Bulletin, has served as reviewer of numerous proposals for publication in technical journals, and has won five IBM Research Division Awards. His key achievements include the design and fabrication of high-power, highly reliable, single mode diode lasers.
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