A Comprehensive and Up-to-Date Treatment of RF and Microwave
Transistor Amplifiers
This book provides state-of-the-art coverage of RF and microwave
transistor amplifiers, including low-noise, narrowband, broadband,
linear, high-power, high-efficiency, and high-voltage. Topics
covered include modeling, analysis, design, packaging, and thermal
and fabrication considerations.
Through a unique integration of theory and practice, readers
will learn to solve amplifier-related design problems ranging from
matching networks to biasing and stability. More than 240 problems
are included to help readers test their basic amplifier and circuit
design skills-and more than half of the problems feature fully
worked-out solutions.
With an emphasis on theory, design, and everyday applications,
this book is geared toward students, teachers, scientists, and
practicing engineers who are interested in broadening their
knowledge of RF and microwave transistor amplifier circuit
design.
Об авторе
Inder J. Bahl, Ph D, has been working on microwave and millimeter wave Ga As ICs for more than twenty-five years. He is responsible for the design of over 400 MMICs, including low-noise amplifiers, driver amplifiers, broadband amplifiers, power amplifiers (high-power, high-efficiency, and broadband), dc and ac coupled transimpedance and limiting amplifiers, multi-bit phase shifters, narrow and broadband SPDT switches, redundant switches, programmable attenuators, balanced mixers, quadrature downconverters, upconverters, transmit chips, receive chips and transmit/receive chips. Dr. Bahl has also developed modules consisting of MMICs for PAR and ECM applications.
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