автор: Michael S Shur

The unique materials properties of Ga N-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and …

Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an Si C crystal. The potential …

Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, …

After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial Si C devices â power switching Schottky …

This book covers the principles, methodology, and prototypes of sensing skin-like devices and related intelligence and software. Sensitive Skins are large-area and flexible arrays of sensors …

Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published. However, due to the lack of exchange and …

Frontiers in Electronics contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This meeting was the fifth in the series of WOFE workshops, and strongly …

Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N …

Frontiers in Electronics includes the best papers of WOFE-11 invited by the Editors and down selected after the peer review process. This book is conceived to make available in the international …

The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great …