A comprehensive introduction and up-to-date reference to
Si C power semiconductor devices covering topics from material
properties to applications
Based on a number of breakthroughs in Si C material science
and fabrication technology in the 1980s and 1990s, the first Si C
Schottky barrier diodes (SBDs) were released as commercial products
in 2001. The Si C SBD market has grown significantly since
that time, and SBDs are now used in a variety of power systems,
particularly switch-mode power supplies and motor controls.
Si C power MOSFETs entered commercial production in 2011,
providing rugged, high-efficiency switches for high-frequency power
systems. In this wide-ranging book, the authors draw on their
considerable experience to present both an introduction to Si C
materials, devices, and applications and an in-depth reference for
scientists and engineers working in this fast-moving
field. Fundamentals of Silicon Carbide Technology
covers basic properties of Si C materials, processing technology,
theory and analysis of practical devices, and an overview of the
most important systems applications. Specifically included
are:
* A complete discussion of Si C material properties, bulk crystal
growth, epitaxial growth, device fabrication technology, and
characterization techniques.
* Device physics and operating equations for Schottky diodes, pin
diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and
thyristors.
* A survey of power electronics applications, including
switch-mode power supplies, motor drives, power converters for
electric vehicles, and converters for renewable energy
sources.
* Coverage of special applications, including microwave devices,
high-temperature electronics, and rugged sensors.
* Fully illustrated throughout, the text is written by recognized
experts with over 45 years of combined experience in Si C research
and development.
This book is intended for graduate students and researchers in
crystal growth, material science, and semiconductor device
technology. The book is also useful for design engineers,
application engineers, and product managers in areas such as power
supplies, converter and inverter design, electric vehicle
technology, high-temperature electronics, sensors, and smart grid
technology.
Yazar hakkında
Tsunenobu Kimoto, Department of Electronic Science and
Engineering, Kyoto University, Japan.
Professor Kimoto has been involved in Si C research for more
than 20 years and his research activity in this field covers
growth, optical and electrical characterization, device processing,
device design and fabrication. He has published more than 300
papers in international journals and has presented more than 50
invited talks at international conferences. He was a guest
editor of the 2008 Si C special issues of IEEE Transactions on
Electron Devices.
James A Cooper, School of Electrical and Computer
Engineering, Purdue University, Indiana, USA
Professor Cooper was a member of technical staff at Bell
Laboratories for ten years where he was principal designer of
AT&T’s first microprocessor and investigated nonlinear
transport in silicon inversion layers. His research at Purdue
has centered on semiconductor device physics and characterization,
focusing primarily on III-V materials and silicon carbide. He
has co-authored over 250 technical papers and conference
presentations.
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