Robert W. Dutton & Zhiping Yu 
Technology CAD – Computer Simulation of IC Processes and Devices [PDF ebook] 

129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium ………. . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction – Equilibrium Conditions. 147 155 4.6 The pn Junction – Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects ….. . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction …………. . 197 5.2 The MOS Capacitor …….. . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction … 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis … 252 6.4 Generalized Charge Storage Model 260 6., 1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model …