This topical and timely textbook is a collection of problems for students, researchers, and practitioners interested in state-of-the-art material and device applications in quantum mechanics. Most problem are relevant either to a new device or a device concept or to current research topics which could spawn new technology. It deals with the practical aspects of the field, presenting a broad range of essential topics currently at the leading edge of technological innovation.
Includes discussion on:
Properties of Schroedinger Equation
Operators
Bound States in Nanostructures
Current and Energy Flux Densities in Nanostructures
Density of States
Transfer and Scattering Matrix Formalisms for Modelling Diffusive Quantum Transport
Perturbation Theory, Variational Approach and their Applications to Device Problems
Electrons in a Magnetic or Electromagnetic Field and Associated Phenomena
Time-dependent Perturbation Theory and its Applications
Optical Properties of Nanostructures
Problems in Quantum Mechanics: For Material Scientists, Applied Physicists and Device Engineers is an ideal companion to engineering, condensed matter physics or materials science curricula. It appeals to future and present engineers, physicists, and materials scientists, as well as professionals in these fields needing more in-depth understanding of nanotechnology and nanoscience.
Mục lục
About the Authors ix
Preface xi
1 General Properties of the Schrodinger Equation 1
2 Operators 15
3 Bound States 47
4 Heisenberg Principle 80
5 Current and Energy Flux Densities 101
6 Density of States 128
7 Transfer Matrix 166
8 Scattering Matrix 205
9 Perturbation Theory 228
10 Variational Approach 245
11 Electron in a Magnetic Field 261
12 Electron in an Electromagnetic Field and Optical Properties of Nanostructures 281
13 Time-Dependent Schrodinger Equation 292
A Postulates of Quantum Mechanics 314
B Useful Relations for the One-Dimensional Harmonic Oscillator 317
C Properties of Operators 319
D The Pauli Matrices and their Properties 322
E Threshold Voltage in a High Electron Mobility Transistor Device 325
F Peierls’s Transformation 329
G Matlab Code 332
Index 343
Giới thiệu về tác giả
MARC CAHAY, Spintronics and Vacuum Nanoelectronics Laboratory, University of Cincinnati, USA
SUPRIYO BANDYOPADHYAY, School of Engineering, Virginia Commonwealth University, USA
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