This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
- Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
- Details new architectures and current modeling concepts for non-volatile memory devices;
- Focuses on conduction through multi-layer gate dielectrics stacks.
Mục lục
Materials and Device Reliability in SONOS Memories.- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices.- Hybrid Memories Based on Redox Molecules.- Organic Floating-Gate Memory Structures.- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer.
Giới thiệu về tác giả
Panagiotis Dimitrakis is at the Institute of Advanced Materials Physicochemical Processes Nanotechnology & Microsystems at the National Centre for Scientific Research, Greece.
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