Silicon Carbide (Si C) is well known for its excellent material properties, high durability, high wear resistance, light weight and extreme hardness. This combination of properties makes them ideal candidates for tribological, semiconductor and MEMs, and optoelectronic applications. However, Si C is also known for its low fracture toughness, extreme brittleness and poor machinability. This book presents topical research data in the study of silicon carbide, including the etching and thin film formation of silicon carbide using highly reactive gases; production and characterization of Si C particles; microstructure of silicon carbide nanowires; ductile regime material removal of silicon carbide; limitation of Si C in the liquid-state processing of Al-MMC; and the effects of ion implantation in silicon carbide.
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