This book presents the fundamentals of the thermoelectrical effect in silicon carbide (Si C), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of Si C, its properties and fabrication processes for Si C devices and introduces the thermoelectrical sensing theories in different Si C morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in Si C at high temperatures. Discussing several desirable features of thermoelectrical Si C sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response Si C sensing devices based on thermoelectrical effects.
Mục lục
Introduction to Si C and Thermoelectrical Properties.- Fundamentals of Thermoelectrical Effect in Si C.- Desirable Features for High Temperature Si C Sensors.- Fabrication of Si C MEMS Sensors.- Impact of Design and Process on Performance of Si C Thermal Devices.- Applications of Thermoelectrical Effect in Si C.- Future prospects of Si C Thermoelectrical Sensing Devices.
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