Fin FETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.
The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the ‘Advanced non-classical CMOS devices’ category. Of all the existing multigate devices, the Fin FET is the most widely known.
Fin FETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.
表中的内容
The SOI MOSFET: from Single Gate to Multigate.- Multigate MOSFET Technology.- BSIM-CMG: A Compact Model for Multi-Gate Transistors.- Physics of the Multigate MOS System.- Mobility in Multigate MOSFETs.- Radiation Effects in Advanced Single- and Multi-Gate SOI MOSFETs.- Multi-Gate MOSFET Circuit Design.
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