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John D. Cressler 
Measurement and Modeling of Silicon Heterostructure Devices [EPUB ebook] 

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When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern Si Ge devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample Si Ge HBT compact model parameters.

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语言 英语 ● 格式 EPUB ● 网页 200 ● ISBN 9781351834766 ● 出版者 CRC Press ● 发布时间 2018 ● 下载 3 时 ● 货币 EUR ● ID 6708346 ● 复制保护 Adobe DRM
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