This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals.
This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.
表中的内容
Introduction
I. FUNDAMENTALS AND CHARACTERIZATION
Fundamentals of Electronic Structure of Si Nanocrystals
Surface Physics of Si Nanocrystals
Linear and Nonlinear Optical Properties of Si Nanocrystals with Surface Plasmon Coupling
Electrical Properties: Electrical Transport through Si O2-containing Si Nanocrystals
Thermal Properties of Si Nanocrystals
Surface Passivation and Functionalization of Si Nanocrystals
Si Nanocrystals in Astrophysics
Characterization of Si Nanocrystals with Diagnostic Techniques
II. NANOCRYSTAL GROWTH
Growth Kinetics of Si Nanocrystals in Si O2
Growth Kinetics of Si Nanocrystals in Silicon Nitride
Chemical Synthesis of Si Nanocrystals.
Colloidal Synthesis of Si Nanocrystals and Nanowires
Ion Implantation Formation of Silicon Nanocrystals
Formation of Silicon Nanocrystals by PECVD Deposition and Annealing
Formation of Si Nanocrystals by Sputtering
Sol-Gel Synthesis of Silicon Nanocrystals
Synthesis and Functionalization of Silicon Nanocrystals by Means of Non-thermal Plasmas
Silicon Nanocrystals in Porous Silicon and Applications
III. APPLICATIONS
Flash Memory
Photonic Applications
Lighting Applications
Solar Cells
Bioapplications and Sensor Applications
Photosensitizers for Oxygen Molecules and Explosives
关于作者
Lorenzo Pavesi is Professor of Experimental Physics and Head of the Nanoscience Laboratory at the University of Trento, Italy. He received his Ph D in physics in 1990 from the Ecole Polytechnique Federale de Lausanne, Switzerland. In Trento he founded the research activity in semiconductor optoelectronics and established laboratories for photonics, growth and advanced treatment of materials. Lorenzo Pavesi concentrates his research activity on silicon-based photonics, aiming at the integration of photonics and electronics by using silicon nanostructures. He holds six patents, is author or co-author of more than 250 papers, several reviews and two books as well as editor of more than ten books.
Rasit Turan is Professor in the Department of Physics of the Middle East Technical University (METU) in Ankara, Turkey, where he heads the Semiconductor Materials and Devices group. He obtained his Ph D in 1990 from the University of Oslo, Norway, and worked as post-doc and visiting scientist at Linköping University, Sweden, and Toronto University, Canada. He works on fabrication, characterization and applications of nanostructured semiconductors, in particular Si nanocrystals. In addition to his research, Rasit Turan serves as the coordinator of the Nanotechnology and Nanobiotechnology Research Center of METU.
来自同一作者的更多电子书 / 编辑
28,048 此类电子书
