Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.
表中的内容
1. History and general evolution of design techniques of memories
1.1. Classification of memories according to their characteristics
1.2. State of the art and issues encountered when designing flash non-volatile memories
2. Inorganic materials memories
2.1. Magnetic memories
2.2. Ferroelectric memories
2.3. Phase-change memories
2.4. Metal oxide and variable valence memories
2.5. Redox metallization memories
2.6. Optoelectronic memories
3. Organic materials memory
3.1. Issues related to metal-molecule contacts
3.2. Implementations and applications
4. Conclusions and perspectives
关于作者
Pierre Camille Lacaze, Emeritus Professor, Université Denis Diderot, Paris, France.
Jean-Christophe?Lacroix, Professor, Université Denis Diderot, Paris, France.
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