After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial Si C devices â power switching Schottky diodes and high temperature MESFETs â are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in Si C technology and materials and device research, Si C Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Sergey Rumyantsev & Michael S Shur
Sic Materials And Devices – Volume 1 [PDF ebook]
Volume 1
Sic Materials And Devices – Volume 1 [PDF ebook]
Volume 1
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语言 英语 ● 格式 PDF ● 网页 344 ● ISBN 9789812773371 ● 文件大小 20.2 MB ● 编辑 Sergey Rumyantsev & Michael S Shur ● 出版者 World Scientific Publishing Company ● 市 Singapore ● 国家 SG ● 发布时间 2006 ● 下载 24 个月 ● 货币 EUR ● ID 2445962 ● 复制保护 Adobe DRM
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