In the 1950s Shockley predicted that Si C would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on Si C, with new achievements being reported every year. This book reviews the progress achieved in Si C research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-Si C polytypes including structural, electrical, optical, surface and interface properties; describes existing key Si C devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
来自同一作者的更多电子书 / 编辑
18,579 此类电子书
