This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and Si Ge), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
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Bahasa Inggris ● Format PDF ● Halaman 348 ● ISBN 9789812794703 ● Ukuran file 25.0 MB ● Editor Ronald D Schrimpf & Daniel M Fleetwood ● Penerbit World Scientific Publishing Company ● Kota Singapore ● Negara SG ● Diterbitkan 2004 ● Diunduh 24 bulan ● Mata uang EUR ● ID 2446664 ● Perlindungan salinan Adobe DRM
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