Silicon Carbide – this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, Si C has recently gained new interest as a substrate material for the manufacture of controlled graphene. Si C and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.
This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of Si C power MOSFETs, or Si C sensors. The authors discuss MEMS and NEMS as Si C-based electronics for automotive industry as well as Si C-based circuit elements for high temperature applications, and the application of transistors in PV-inverters.
The list of contributors reads like a ‘Who’s Who’ of the Si C community, strongly benefiting from collaborations between research institutions and enterprises active in Si C crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Tabella dei contenuti
1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
2) Silicon Carbide power devices –
Status and upcoming challenges with a special attention to industrial application
3) Effect of an intermediate graphite layer on the electronic properties of metal/Si C contacts
4) Reliability aspects of Si C Schottky Diodes
5) Design, process, and performance of all-epitaxial normally-off Si C JFETs
6) Extreme Temperature Si C Integrated Circuit Technology
7) 1200 V Si C Vertical-channel-JFET based cascode switches
8) Alternative techniques to reduce interface traps in n-type 4H-Si C MOS capacitors
9) High electron mobility ahieved in n-channel 4H-Si C MOSFETs oxidized in the presence of nitrogen
10) 4H-Si C MISFETs with Nitrogen-containing Insulators
11) Si C Inversion Mobility
12) Development of Si C diodes, power MOSFETs and intellegent Power Modules
13) Reliability issues of 4H-Si C power MOSFETs toward high junction temperature operation
14) Application of Si C-Transistors in Photovoltaic-Inverters
15) Design and Technology Considerations for Si C Bipolar Devices: BJTs, IGBTs, and GTOs
16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-Si C BJTs
17) Si C avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection
Circa l’autore
Peter Friedrichs is Managing Director at Si CED, a joint venture between Siemens and Infineon located in Erlangen, Germany. Si CED develops technologies for Si C power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests.
Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of Si C devices. He has authored over 300 scientific publications.
Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) ‘Silicon carbide as semiconductor material: novel aspects of crystal growth and doping’. Alongside its experimental research on Si C, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications.
Gerhard Pensl works with his group on the growth of Si C single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nurnberg, Germany, and has authored over 300 scientific publications.
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