Autore: Tsunenobu Kimoto

Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan. Professor Kimoto has been involved in Si C research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences. He was a guest editor of the 2008 Si C special issues of IEEE Transactions on Electron Devices. James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USA Professor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T”s first microprocessor and investigated nonlinear transport in silicon inversion layers. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over 250 technical papers and conference presentations.