This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
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Idioma Inglés ● Formato PDF ● Páginas 392 ● ISBN 9781498745130 ● Editorial CRC Press ● Publicado 2016 ● Descargable 3 veces ● Divisa EUR ● ID 5008741 ● Protección de copia Adobe DRM
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