This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
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语言 英语 ● 格式 PDF ● 网页 392 ● ISBN 9781498745130 ● 出版者 CRC Press ● 发布时间 2016 ● 下载 3 时 ● 货币 EUR ● ID 5008741 ● 复制保护 Adobe DRM
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