This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
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Język Angielski ● Format PDF ● Strony 392 ● ISBN 9781498745130 ● Wydawca CRC Press ● Opublikowany 2016 ● Do pobrania 3 czasy ● Waluta EUR ● ID 5008741 ● Ochrona przed kopiowaniem Adobe DRM
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