Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (In Sb N) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (Hg Cd Te) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterization of In Sb and In Sb N materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.
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格式 PDF ● 网页 148 ● ISBN 9781621009726 ● 编辑 Yoon Soon Fatt & Lim Kim Peng ● 出版者 Nova Science Publishers ● 发布时间 2014 ● 下载 3 时 ● 货币 EUR ● ID 7221689 ● 复制保护 Adobe DRM
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