This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the Fin FET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
Beli ebook ini dan dapatkan 1 lagi PERCUMA!
Format EPUB ● Halaman-halaman 154 ● ISBN 9781351751032 ● Penerbit CRC Press ● Diterbitkan 2017 ● Muat turun 3 kali ● Mata wang EUR ● ID 8116198 ● Salin perlindungan Adobe DRM
Memerlukan pembaca ebook yang mampu DRM