This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
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Language English ● Format PDF ● Pages 560 ● ISBN 9789812831675 ● File size 258.8 MB ● Publisher World Scientific Publishing Company ● City Singapore ● Country SG ● Published 1996 ● Downloadable 24 months ● Currency EUR ● ID 2681671 ● Copy protection Adobe DRM
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