This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
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Limba Engleză ● Format PDF ● Pagini 560 ● ISBN 9789812831675 ● Mărime fișier 258.8 MB ● Editura World Scientific Publishing Company ● Oraș Singapore ● Țară SG ● Publicat 1996 ● Descărcabil 24 luni ● Valută EUR ● ID 2681671 ● Protecție împotriva copiilor Adobe DRM
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