This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
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语言 英语 ● 格式 PDF ● 网页 560 ● ISBN 9789812831675 ● 文件大小 258.8 MB ● 出版者 World Scientific Publishing Company ● 市 Singapore ● 国家 SG ● 发布时间 1996 ● 下载 24 个月 ● 货币 EUR ● ID 2681671 ● 复制保护 Adobe DRM
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