This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
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Idioma Inglés ● Formato PDF ● Páginas 560 ● ISBN 9789812831675 ● Tamaño de archivo 258.8 MB ● Editorial World Scientific Publishing Company ● Ciudad Singapore ● País SG ● Publicado 1996 ● Descargable 24 meses ● Divisa EUR ● ID 2681671 ● Protección de copia Adobe DRM
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