This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
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Lingua Inglese ● Formato PDF ● Pagine 560 ● ISBN 9789812831675 ● Dimensione 258.8 MB ● Casa editrice World Scientific Publishing Company ● Città Singapore ● Paese SG ● Pubblicato 1996 ● Scaricabile 24 mesi ● Moneta EUR ● ID 2681671 ● Protezione dalla copia Adobe DRM
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